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2013 Teacher's Publications

Prof. Chen, Quark Yung-Sung 

[1] S.M. Hamad, D.P. Norman, Q.Y. Chen, F. Keles, H.W. Seo, Competitive In and Ga incorporations for InxGa1-xN (0.29 < x < 0.36) nanorods grown at a moderate temperature, Aip Advances, 3 (2013).

 

[2] O. Lozano, Q.Y. Chen, B.P. Tilakaratne, H.W. Seo, X.M. Wang, P.V. Wadekar, P.V. Chinta, L.W. Tu, N.J. Ho, D. Wijesundera, W.K. Chu, Evolution of nanoripples on silicon by gas cluster-ion irradiation, Aip Advances, 3 (2013).

 

[3] O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, I. Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, W.K. Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113 (2013) 171-178.

 

[4] H.W. Seo, S.M. Hamad, D.P. Norman, F. Keles, Q.Y. Chen, Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa1-xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy, Applied Physics Express, 6 (2013).

 

[5] P.V. Wadekar, Q.Y. Chen, H.C. Huang, Y.T. Lin, C.W. Chang, H.W. Seo, T.W. Dung, M.C. Chou, S.W. Feng, N.J. Ho, D. Wijesundera, W.K. Chu, L.W. Tu, Growth and Characterization of InxGa1-xN Multiple Quantum Wells Without Phase Separation, Journal of Electronic Materials, 42 (2013) 838-843.

 

Prof. Hung-Duen Yang 

 

[1] A.K. Ghosh, G.D. Dwivedi, B. Chatterjee, B. Rana, A. Barman, S. Chatterjee, H.D. Yang, Role of codoping on multiferroic properties at room temperature in BiFeO3 ceramic, Solid State Communications, 166 (2013) 22-26.

 

[2] T.H. Kao, S. Mukherjee, H.D. Yang, Magnetic nanoparticles induced dielectric enhancement in (La, Gd)(2)O-3: SiO2 composite systems, Journal of Magnetism and Magnetic Materials, 346 (2013) 11-15.

 

[3] C.W. Luo, H.J. Chen, C.M. Tu, C.C. Lee, S.A. Ku, W.Y. Tzeng, T.T. Yeh, M.C. Chiang, H.J. Wang, W.C. Chu, J.Y. Lin, K.H. Wu, J.Y. Juang, T. Kobayashi, C.M. Cheng, C.H. Chen, K.D. Tsuei, H. Berger, R. Sankar, F.C. Chou, H.D. Yang, THz Generation and Detection on Dirac Fermions in Topological Insulators, Advanced Optical Materials, 1 (2013) 804-808.

 

[4] C.W. Wang, C.H. Lee, C.Y. Li, C.M. Wu, W.H. Li, C.C. Chou, H.D. Yang, J.W. Lynn, Q.Z. Huang, A.B. Harris, H. Berger, Complex magnetic couplings in Co3TeO6, Physical Review B, 88 (2013).

 

Prof. Lo, I-Kai 

 

[1] I. Lo, W.Y. Pang, W.Y. Chen, Y.C. Hsu, C.H. Hsieh, C.H. Shih, M.M.C. Chou, T.M. Hsu, G.Z.L. Hsu, Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy, Aip Advances, 3 (2013).

 

[2] O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, I. Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, W.K. Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113 (2013) 171-178.

 

[3] W.Y. Pang, I. Lo, S. Wu, Z.X. Lin, C.H. Shih, Y.C. Lin, Y.C. Wang, C.H. Hu, G.L. Hsu, Growth of wurtzite and zinc-blende phased GaN on silicon (100) substrate with sputtered AlN buffer layer, Journal of Crystal Growth, 382 (2013) 1-6.

 

Prof. Tu, Li-Wei 

 

[1] A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, A.Y. Egorov, Y.T. Lin, L.W. Tu, M. Tchernycheva, GaN nanowire ultraviolet photodetector with a graphene transparent contact, Applied Physics Letters, 103 (2013).

 

[2] C.Y. Chang, H.M. Huang, Y.P. Lan, T.C. Lu, L.W. Tu, W.F. Hsieh, Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy, Crystal Growth & Design, 13 (2013) 3098-3102.

 

[3] S.W. Feng, Y.Y. Chen, C.M. Lai, L.W. Tu, J. Han, Anisotropic strain relaxation and the resulting degree of polarization by one-and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate, Journal of Applied Physics, 114 (2013).

 

[4] S.W. Feng, C.M. Lai, C.Y. Tsai, Y.R. Su, L.W. Tu, Modeling of InGaN p-n junction solar cells, Optical Materials Express, 3 (2013) 1777-1788.

 

[5] C.Y. Huang, R.H. Horng, D.S. Wuu, L.W. Tu, H.S. Kao, Thermal annealing effect on material characterizations of beta-Ga2O3 epilayer grown by metal organic chemical vapor deposition, Applied Physics Letters, 102 (2013).

 

[6] H.M. Huang, C.C. Kuo, C.Y. Chang, Y.T. Lin, T.C. Lu, L.W. Tu, W.F. Hsieh, Growth and Characteristics of a-Plane GaN on ZnO Heterostructure, Ecs Journal of Solid State Science and Technology, 2 (2013) X1-X1.

 

[7] O. Lozano, Q.Y. Chen, B.P. Tilakaratne, H.W. Seo, X.M. Wang, P.V. Wadekar, P.V. Chinta, L.W. Tu, N.J. Ho, D. Wijesundera, W.K. Chu, Evolution of nanoripples on silicon by gas cluster-ion irradiation, Aip Advances, 3 (2013).

 

[8] O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, I. Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, W.K. Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113 (2013) 171-178.

 

[9] P.A. Mante, Y.C. Wu, Y.T. Lin, C.Y. Ho, L.W. Tu, C.K. Sun, Gigahertz Coherent Guided Acoustic Phonons in AlN/GaN Nanowire Superlattices, Nano Letters, 13 (2013) 1139-1144.

 

[10] P. Ravadgar, R.H. Horng, S.D. Yao, H.Y. Lee, B.R. Wu, S.L. Ou, L.W. Tu, Effects of crystallinity and point defects on optoelectronic applications of beta-Ga2O3 epilayers, Optics Express, 21 (2013) 24599-24610.

 

[11] P.V. Wadekar, Q.Y. Chen, H.C. Huang, Y.T. Lin, C.W. Chang, H.W. Seo, T.W. Dung, M.C. Chou, S.W. Feng, N.J. Ho, D. Wijesundera, W.K. Chu, L.W. Tu, Growth and Characterization of InxGa1-xN Multiple Quantum Wells Without Phase Separation, Journal of Electronic Materials, 42 (2013) 838-843.

 

Prof. Chou, Hsiung

 

[1] M. Bohra, C.P. Wu, H.J. Yeh, H. Chou, High symmetric SrRuO3 (001) thin films: Perfectly lattice-matched electrodes for multiferroic BiFeO3, Journal of Applied Physics, 113 (2013).

 

[2] H. Chou, K.C. Liu, C.T. Wu, C.P. Wu, M. Bohra, A. Pyatakov, Y.C. Chen, C.C. Yu, S.J. Sun, The ferroelectricity of Bi0.9Pb0.1FeO3 films grown on atomic flat SrRuO3/SrTiO3 substrates, Journal of Applied Physics, 113 (2013).

 

[3] C.C. Huang, S.J. Chang, C.Y. Yang, H. Chou, Y.C. Tseng, Instrument for x-ray absorption spectroscopy with in situ electrical control characterizations, Review of Scientific Instruments, 84 (2013).

 

Prof. Chie-Tong Kuo

 

[1] Y.S. Chen, C.H. Liao, Y.C. Cheng, C.T. Kuo, H.C. Wang, Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy, Optical Materials Express, 3 (2013) 1450-1458.

 

[2] Y.S. Chen, C.H. Liao, Y.L. Chueh, C.T. Kuo, H.C. Wang, Plan-view transmission electron microscopy study on coalescence overgrowth of GaN nanocolumns by MOCVD, Optical Materials Express, 3 (2013) 1459-1467.

 

[3] T.K. Liu, M.S. Tsai, W.C. Hung, C.T. Kuo, D.P. Wang, I.M. Jiang, Field-enhanced Raman scattering by silver nanoparticle with graded SiO2 coating, Applied Physics Letters, 102 (2013).

 

[4] K.Y. Yu, C.R. Lee, C.H. Lin, C.T. Kuo, Controllable pretilt angle of liquid crystals with the formation of microgrooves, Journal of Physics D-Applied Physics, 46 (2013).

 

Prof. Dong-Po Wang

 

[1] T.K. Liu, M.S. Tsai, W.C. Hung, C.T. Kuo, D.P. Wang, I.M. Jiang, Field-enhanced Raman scattering by silver nanoparticle with graded SiO2 coating, Applied Physics Letters, 102 (2013).

 

Prof. Chang, Ting-Chang

 

[1] G.W. Chang, T.C. Chang, J.C. Jhu, T.M. Tsai, Y.E. Syu, K.C. Chang, F.Y. Jian, Y.C. Hung, Y.H. Tai, N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors, Surface & Coatings Technology, 231 (2013) 281-284.

 

[2] K. Chang, J.W. Huang, T.C. Chang, T.M. Tsai, K.H. Chen, T.F. Young, J.H. Chen, R. Zhang, J.C. Lou, S.Y. Huang, Y.C. Pan, H.C. Huang, Y.E. Syu, D.S. Gan, D.H. Bao, S.M. Sze, Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer, Nanoscale Research Letters, 8 (2013).

 

[3] K.C. Chang, C.H. Pan, T.C. Chang, T.M. Tsai, R. Zhang, J.C. Lou, T.F. Young, J.H. Chen, C.C. Shih, T.J. Chu, J.Y. Chen, Y.T. Su, J.P. Jiang, K.H. Chen, H.C. Huang, Y.E. Syu, D.S. Gan, S.M. Sze, Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment, Ieee Electron Device Letters, 34 (2013) 617-619.

 

[4] K.C. Chang, T.M. Tsai, T.C. Chang, H.H. Wu, J.H. Chen, Y.E. Syu, G.W. Chang, T.J. Chu, G.R. Liu, Y.T. Su, M.C. Chen, J.H. Pan, J.Y. Chen, C.W. Tung, H.C. Huang, Y.H. Tai, D.S. Gan, S.M. Sze, Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory, Ieee Electron Device Letters, 34 (2013) 399-401.

 

[5] K.C. Chang, T.M. Tsai, T.C. Chang, H.H. Wu, K.H. Chen, J.H. Chen, T.F. Young, T.J. Chu, J.Y. Chen, C.H. Pan, Y.T. Su, Y.E. Syu, C.W. Tung, G.W. Chang, M.C. Chen, H.C. Huang, Y.H. Tai, D.S. Gan, J.J. Wu, Y. Hu, S.M. Sze, Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices, Ieee Electron Device Letters, 34 (2013) 511-513.

 

[6] K.C. Chang, T.M. Tsai, R. Zhang, T.C. Chang, K.H. Chen, J.H. Chen, T.F. Young, J.C. Lou, T.J. Chu, C.C. Shih, J.H. Pan, Y.T. Su, Y.E. Syu, C.W. Tung, M.C. Chen, J.J. Wu, Y. Hu, S.M. Sze, Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process, Applied Physics Letters, 103 (2013).

 

[7] K.C. Chang, R. Zhang, T.C. Chang, T.M. Tsai, J.C. Lou, J.H. Chen, T.F. Young, M.C. Chen, Y.L. Yang, Y.C. Pan, G.W. Chang, T.J. Chu, C.C. Shih, J.Y. Chen, C.H. Pan, Y.T. Su, Y.E. Syu, Y.H. Tai, S.M. Sze, Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices, Ieee Electron Device Letters, 34 (2013) 677-679.

 

[8] C.E. Chen, T.C. Chang, B. You, W.H. Lo, S.H. Ho, C.H. Dai, J.Y. Tsai, H.M. Chen, G.R. Liu, Y.H. Tai, T.Y. Tseng, Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs, Ecs Solid State Letters, 2 (2013) Q90-Q92.

 

[9] C.N. Chen, T.Y. Dong, T.C. Chang, M.C. Chen, H.L. Tsai, W.S. Hwang, Solution-based beta-diketonate silver ink for direct printing of highly conductive features on a flexible substrate, Journal of Materials Chemistry C, 1 (2013) 5161-5168.

 

[10] K.H. Chen, R. Zhang, T.C. Chang, T.M. Tsai, K.C. Chang, J.C. Lou, T.F. Young, J.H. Chen, C.C. Shih, C.W. Tung, Y.E. Syu, S.M. Sze, Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices, Applied Physics Letters, 102 (2013).

 

[11] M.C. Chen, T.C. Chang, Y.C. Chiu, S.C. Chen, S.Y. Huang, K.C. Chang, T.M. Tsai, K.H. Yang, S.M. Sze, M.J. Tsai, The resistive switching characteristics in TaON films for nonvolatile memory applications, Thin Solid Films, 528 (2013) 224-228.

 

[12] T.C. Chen, T.C. Chang, T.Y. Hsieh, M.Y. Tsai, C.T. Tsai, S.C. Chen, C.S. Lin, F.Y. Jian, Analyzing the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress, Surface & Coatings Technology, 231 (2013) 465-470.

 

[13] Y.C. Chen, T.C. Chang, H.W. Li, W.F. Chung, S.C. Chen, C.P. Wu, Y.H. Chen, Y.H. Tai, T.Y. Tseng, F.S. Yeh, Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors, Surface & Coatings Technology, 231 (2013) 531-534.

 

[14] Y.T. Chen, T.C. Chang, J.J. Huang, H.C. Tseng, P.C. Yang, A.K. Chu, J.B. Yang, H.C. Huang, D.S. Gan, M.J. Tsai, S.M. Sze, Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory, Applied Physics Letters, 102 (2013).

 

[15] Y.T. Chen, T.C. Chang, H.K. Peng, H.C. Tseng, J.J. Huang, J.B. Yang, A.K. Chu, T.F. Young, S.M. Sze, Insertion of a Si layer to reduce operation current for resistive random access memory applications, Applied Physics Letters, 102 (2013).

 

[16] Y.T. Chen, T.C. Chang, P.C. Yang, J.J. Huang, H.C. Tseng, H.C. Huang, J.B. Yang, A.K. Chu, D.S. Gan, M.J. Tsai, S.M. Sze, Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure, Ieee Electron Device Letters, 34 (2013) 226-228.

 

[17] T.J. Chu, T.C. Chang, T.M. Tsai, H.H. Wu, J.H. Chen, K.C. Chang, T.F. Young, K.H. Chen, Y.E. Syu, G.W. Chang, Y.F. Chang, M.C. Chen, J.H. Lou, J.H. Pan, J.Y. Chen, Y.H. Tai, C. Ye, H. Wang, S.M. Sze, Charge Quantity Influence on Resistance Switching Characteristic During Forming Process, Ieee Electron Device Letters, 34 (2013) 502-504.

 

[18] S.H. Ho, T.C. Chang, Y.H. Lu, B.W. Wang, W.H. Lo, C.E. Chen, J.Y. Tsai, H.M. Chen, K.J. Liu, T.Y. Tseng, O. Cheng, C.T. Huang, T.F. Chen, X.X. Cao, High-k shallow traps observed by charge pumping with varying discharging times, Journal of Applied Physics, 114 (2013).

 

[19] S.H. Ho, T.C. Chang, B.W. Wang, Y.S. Lu, W.H. Lo, C.E. Chen, J.Y. Tsai, H.M. Chen, G.R. Liu, T.Y. Tseng, O. Cheng, C.T. Huang, X.X. Cao, Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks, Applied Physics Letters, 102 (2013).

 

[20] S.H. Ho, T.C. Chang, C.W. Wu, W.H. Lo, C.E. Chen, J.Y. Tsai, H.M. Chen, G.R. Liu, T.Y. Tseng, O. Cheng, C.T. Huang, D. Chen, S.M. Sze, Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks, Ecs Journal of Solid State Science and Technology, 2 (2013) Q187-Q191.

 

[21] S.H. Ho, T.C. Chang, C.W. Wu, W.H. Lo, C.E. Chen, J.Y. Tsai, G.R. Liu, H.M. Chen, Y.S. Lu, B.W. Wang, T.Y. Tseng, O. Cheng, C.T. Huang, S.M. Sze, Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors, Applied Physics Letters, 102 (2013).

 

[22] T.Y. Hsieh, T.C. Chang, T.C. Chen, M.Y. Tsai, Y.T. Chen, Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress, Thin Solid Films, 528 (2013) 53-56.

 

[23] T.Y. Hsieh, T.C. Chang, T.C. Chen, M.Y. Tsai, Y.T. Chen, F.Y. Jian, C.S. Lin, W.W. Tsai, W.J. Chiang, J.Y. Yan, Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments, Surface & Coatings Technology, 231 (2013) 478-481.

 

[24] T.Y. Hsieh, T.C. Chang, Y.T. Chen, P.Y. Liao, T.C. Chen, M.Y. Tsai, Y.C. Chen, B.W. Chen, A.K. Chu, C.H. Chou, W.C. Chung, J.F. Chang, Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors, Ieee Transactions on Electron Devices, 60 (2013) 1681-1688.

 

[25] T.Y. Hsieh, T.C. Chang, Y.T. Chen, P.Y. Liao, T.C. Chen, M.Y. Tsai, Y.C. Chen, B.W. Chen, A.K. Chu, C.H. Chou, W.C. Chung, J.F. Chang, Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure, Ieee Electron Device Letters, 34 (2013) 638-640.

 

[26] J.J. Huang, T.C. Chang, P.C. Yang, Y.T. Chen, H.C. Tseng, J.B. Yang, S.M. Sze, A.K. Chu, M.J. Tsai, Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer, Thin Solid Films, 528 (2013) 31-35.

 

[27] J.J. Huang, T.C. Chang, C.C. Yu, H.C. Huang, Y.T. Chen, H.C. Tseng, J.B. Yang, S.M. Sze, D.S. Gan, A.K. Chu, J.Y. Lin, M.J. Tsai, Enhancement of the stability of resistive switching characteristics by conduction path reconstruction, Applied Physics Letters, 103 (2013).

 

[28] J.W. Huang, R. Zhang, T.C. Chang, T.M. Tsai, K.C. Chang, J.C. Lou, T.F. Young, J.H. Chen, H.L. Chen, Y.C. Pan, X. Huang, F.Y. Zhang, Y.E. Syu, S.M. Sze, The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory, Applied Physics Letters, 102 (2013).

 

[29] S.Y. Huang, T.C. Chang, M.C. Chen, T.C. Chen, F.Y. Jian, Y.C. Chen, H.C. Huang, D.S. Gan, Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer, Surface & Coatings Technology, 231 (2013) 117-121.

 

[30] J.C. Jhu, T.C. Chang, G.W. Chang, Y.H. Tai, W.W. Tsai, W.J. Chiang, J.Y. Yan, Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment, Journal of Applied Physics, 114 (2013).

 

[31] Y.C. Lai, F.C. Hsu, J.Y. Chen, J.H. He, T.C. Chang, Y.P. Hsieh, T.Y. Lin, Y.J. Yang, Y.F. Chen, Transferable and Flexible Label-Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology, Advanced Materials, 25 (2013) 2733-2739.

 

[32] W.H. Lo, T.C. Chang, C.H. Dai, W.L. Chung, C.E. Chen, S.H. Ho, J.Y. Tsai, H.M. Chen, G.R. Liu, O. Cheng, C.T. Huang, Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors, Thin Solid Films, 528 (2013) 10-18.

 

[33] Y.T. Su, K.C. Chang, T.C. Chang, T.M. Tsai, R. Zhang, J.C. Lou, J.H. Chen, T.F. Young, K.H. Chen, B.H. Tseng, C.C. Shih, Y.L. Yang, M.C. Chen, T.J. Chu, C.H. Pan, Y.E. Syu, S.M. Sze, Characteristics of hafnium oxide resistance random access memory with different setting compliance current, Applied Physics Letters, 103 (2013).

 

[34] Y.E. Syu, R. Zhang, T.C. Chang, T.M. Tsai, K.C. Chang, J.C. Lou, T.F. Young, J.H. Chen, M.C. Chen, Y.L. Yang, C.C. Shih, T.J. Chu, J.Y. Chen, C.H. Pan, Y.T. Su, H.C. Huang, D.S. Gan, S.M. Sze, Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device, Ieee Electron Device Letters, 34 (2013) 864-866.

 

[35] J.Y. Tsai, T.C. Chang, W.H. Lo, C.E. Chen, S.H. Ho, H.M. Chen, Y.H. Tai, O. Cheng, C.T. Huang, Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors, Applied Physics Letters, 103 (2013).

 

[36] J.Y. Tsai, T.C. Chang, W.H. Lo, C.E. Chen, S.H. Ho, H.M. Chen, Y.H. Tai, O. Cheng, C.T. Huang, Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric, Applied Physics Letters, 102 (2013).

 

[37] J.Y. Tsai, T.C. Chang, W.H. Lo, S.H. Ho, C.E. Chen, H.M. Chen, T.Y. Tseng, Y.H. Tai, O. Cheng, C.T. Huang, Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics, 114 (2013).

 

[38] M.Y. Tsai, T.C. Chang, A.K. Chu, T.C. Chen, T.Y. Hsieh, Y.T. Chen, W.W. Tsai, W.J. Chiang, J.Y. Yan, Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures, Thin Solid Films, 528 (2013) 57-60.

 

[39] M.Y. Tsai, T.C. Chang, A.K. Chu, T.C. Chen, T.Y. Hsieh, K.Y. Lin, W.W. Tsai, W.J. Chiang, J.Y. Yan, Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor, Applied Physics Letters, 103 (2013).

 

[40] M.Y. Tsai, T.C. Chang, A.K. Chu, T.Y. Hsieh, T.C. Chen, K.Y. Lin, W.W. Tsai, W.J. Chiang, J.Y. Yan, High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors, Applied Physics Letters, 103 (2013).

 

[41] T.M. Tsai, K.C. Chang, R. Zhang, T.C. Chang, J.C. Lou, J.H. Chen, T.F. Young, B.H. Tseng, C.C. Shih, Y.C. Pan, M.C. Chen, J.H. Pan, Y.E. Syu, S.M. Sze, Performance and characteristics of double layer porous silicon oxide resistance random access memory, Applied Physics Letters, 102 (2013).

 

[42] H.C. Tseng, T.C. Chang, K.H. Cheng, J.J. Huang, Y.T. Chen, F.Y. Jian, S.M. Sze, M.J. Tsai, A.K. Chu, Y.L. Wang, Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory, Thin Solid Films, 529 (2013) 389-393.

 

[43] H.C. Tseng, T.C. Chang, Y.C. Wu, S.W. Wu, J.J. Huang, Y.T. Chen, J.B. Yang, T.P. Lin, S.M. Sze, M.J. Tsai, Y.L. Wang, A.K. Chu, Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure, Ieee Electron Device Letters, 34 (2013) 858-860.

 

[44] J.B. Yang, T.C. Chang, J.J. Huang, S.C. Chen, P.C. Yang, Y.T. Chen, H.C. Tseng, S.M. Sze, A.K. Chu, M.J. Tsai, Resistive switching characteristics of gallium oxide for nonvolatile memory application, Thin Solid Films, 529 (2013) 200-204.

 

[45] J.B. Yang, T.C. Chang, J.J. Huang, Y.T. Chen, H.C. Tseng, A.K. Chu, S.M. Sze, M.J. Tsai, Low power consumption resistance random access memory with Pt/InOx/TiN structure, Applied Physics Letters, 103 (2013).

 

[46] J.B. Yang, T.C. Chang, J.J. Huang, Y.T. Chen, P.C. Yang, H.C. Tseng, A.K. Chu, S.M. Sze, M.J. Tsai, Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device, Thin Solid Films, 528 (2013) 26-30.

 

[47] Y.L. Yang, T.F. Young, T.C. Chang, J.H. Hsu, T.M. Tsai, F.Y. Jian, K.C. Chang, Mechanical Stress Influence on Electronic Transport in Low-kappa SiOC Dielectric Dual Damascene Capacitor, Ieee Electron Device Letters, 34 (2013) 1056-1058.

 

[48] Y.L. Yang, T.F. Young, T.C. Chang, F.Y. Shen, J.H. Hsu, T.M. Tsai, K.C. Chang, H.L. Chen, Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor, Applied Physics Letters, 102 (2013).

 

[49] R. Zhang, K.C. Chang, T.C. Chang, T.M. Tsai, K.H. Chen, J.C. Lou, J.H. Chen, T.F. Young, C.C. Shih, Y.L. Yang, Y.C. Pan, T.J. Chu, S.Y. Huang, C.H. Pan, Y.T. Su, Y.E. Syu, S.M. Sze, High performance of graphene oxide-doped silicon oxide-based resistance random access memory, Nanoscale Research Letters, 8 (2013).

 

[50] R. Zhang, T.M. Tsai, T.C. Chang, K.C. Chang, K.H. Chen, J.C. Lou, T.F. Young, J.H. Chen, S.Y. Huang, M.C. Chen, C.C. Shih, H.L. Chen, J.H. Pan, C.W. Tung, Y.E. Syu, S.M. Sze, Mechanism of power consumption inhibitive multi-layer

Zn:SiO2/SiO2 structure resistance random access memory, Journal of Applied Physics, 114 (2013).

 

[51] Y.C. Chen, T.C. Chang, H.W. Li, W.F. Chung, T.Y. Hsieh, Analysis of Electrical Characteristics and Reliability Change of Zinc-Tin-Oxide Thin-Film Transistors by Photo-Thermal Treatment, Ecs Solid State Letters, 2 (2013) Q72-Q74.

 

[52] Y.C. Chen, T.C. Chang, H.W. Li, W.F. Chung, T.Y. Hsieh, Y.H. Chen, W.W. Tsai, W.J. Chiang, J.Y. Yan, Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors, Ecs Journal of Solid State Science and Technology, 2 (2013) Q74-Q76.

 

[53] T.Y. Hsieh, T.C. Chang, T.C. Chen, Y.T. Chen, M.Y. Tsai, A.K. Chu, Y.C. Chung, H.C. Ting, C.Y. Chen, Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors, Ieee Electron Device Letters, 34 (2013) 63-65.

 

[54] Y.C. Lai, D.Y. Wang, I.S. Huang, Y.T. Chen, Y.H. Hsu, T.Y. Lin, H.F. Meng, T.C. Chang, Y.J. Yang, C.C. Chen, F.C. Hsu, Y.F. Chen, Low operation voltage macromolecular composite memory assisted by graphene nanoflakes, Journal of Materials Chemistry C, 1 (2013) 552-559.

 

Prof. Tsai, Min-Hsiung

 

[1] P. Balasubramanian, H.S. Nair, H.M. Tsai, S. Bhattacharjee, M.T. Liu, R. Yadav, J.W. Chiou, H.J. Lin, T.W. Pi, M.H. Tsai, S. Elizabeth, C.W. Pao, B.Y. Wang, C.H. Chuang, W.F. Pong, Valence band electronic structure of Nd1-xYxMnO3 using X-ray absorption, photoemission and GGA plus U calculations, Journal of Electron Spectroscopy and Related Phenomena, 189 (2013) 51-55.

 

[2] C.L. Sun, C.W. Pao, H.M. Tsai, J.W. Chiou, S.C. Ray, H.W. Wang, M. Hayashi, L.C. Chen, H.J. Lin, J.F. Lee, L. Chang, M.H. Tsai, K.H. Chen, W.F. Pong, Atomistic nucleation sites of Pt nanoparticles on N-doped carbon nanotubes, Nanoscale, 5 (2013) 6812-6818.

 

[3] B.Y. Wang, H.T. Wang, S.B. Singh, Y.C. Shao, Y.F. Wang, C.H. Chuang, P.H. Yeh, J.W. Chiou, C.W. Pao, H.M. Tsai, H.J. Lin, J.F. Lee, C.Y. Tsai, W.F. Hsieh, M.H. Tsai, W.F. Pong, Effect of geometry on the magnetic properties of CoFe2O4-PbTiO3 multiferroic composites, Rsc Advances, 3 (2013) 7884-7893.

 

Prof. Feng-Chuan Chuang

[1] M.A. Albao, D.B. Putungan, C.H. Hsu, F.C. Chuang, Enhanced nucleation of Al islands on H-dosed Si(100)-2 x 1 surface: A combined density functional theory and kinetic Monte Carlo study, Surface Science, 617 (2013) 73-80.

 

[2] F.C. Chuang, C.H. Hsu, C.Y. Chen, Z.Q. Huang, V. Ozolins, H. Lin, A. Bansil, Tunable topological electronic structures in Sb(111) bilayers: A first-principles study, Applied Physics Letters, 102 (2013).

 

[3] C.H. Hsu, V. Ozolins, F.C. Chuang, First-principles study of Bi and Sb intercalated graphene on SiC(0001) substrate, Surface Science, 616 (2013) 149-154.

 

[4] Z.Q. Huang, F.C. Chuang, C.H. Hsu, Y.T. Liu, H.R. Chang, H. Lin, A. Bansil, Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study, Physical Review B, 88 (2013).

 

[5] O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, I. Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, W.K. Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113 (2013) 171-178.

Prof. I-Min Jiang

 

[1] T.K. Liu, M.S. Tsai, W.C. Hung, C.T. Kuo, D.P. Wang, I.M. Jiang, Field-enhanced Raman scattering by silver nanoparticle with graded SiO2 coating, Applied Physics Letters, 102 (2013).

 

Prof. Der-Jun Jang 

 

[1] O. Lozano, Q.Y. Chen, P.V. Wadekar, H.W. Seo, P.V. Chinta, L.H. Chu, L.W. Tu, I. Lo, S.W. Yeh, N.J. Ho, F.C. Chuang, D.J. Jang, D. Wijesundera, W.K. Chu, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films, Solar Energy Materials and Solar Cells, 113 (2013) 171-178.

 

Prof. Chien-Cheng Kuo

 

[1] K.J. Hsueh, C.J. Tsai, S.Y. Wu, H.L. Chou, F. Bisio, C.C. Kuo, W.C. Lin, Oxygen surfactant-assisted growth and dewetting of Co films on O-3 x 3/W(111), Journal of Applied Physics, 114 (2013).

 

[2] H.M. Huang, C.C. Kuo, C.Y. Chang, Y.T. Lin, T.C. Lu, L.W. Tu, W.F. Hsieh, Growth and Characteristics of a-Plane GaN on ZnO Heterostructure, Ecs Journal of Solid State Science and Technology, 2 (2013) X1-X1.

 

[3] C.C. Kuo, W.C. Lin, H.Y. Chang, K.J. Song, Good Control of Spatial and Size Ordering of Fe Nanoparticles by Xe-Gas-Assisted Growth with a Seeding Layer, Applied Physics Express, 6 (2013).

 

Prof. Ya-Ping Chiu 

 

[1] M.R. Chen, Y.C. Ko, I.S. Chiu, Y.P. Chiu, J.K. Wang, M.H. Wu, Comparison of Bilateral Pulmonary Arterial Level and Diameter in Transposition of the Great Arteries, Pediatric Cardiology, 34 (2013) 1175-1180.

 

[2] M.C. Shih, B.C. Huang, C.C. Lin, S.S. Li, H.A. Chen, Y.P. Chiu, C.W. Chen, Atomic-Scale Interfacial Band Mapping across Vertically Phased-Separated Polymer/Fullerene Hybrid Solar Cells, Nano Letters, 13 (2013) 2387-2392.

 

[3] V.T. Tra, J.W. Chen, P.C. Huang, B.C. Huang, Y. Cao, C.H. Yeh, H.J. Liu, E.A. Eliseev, A.N. Morozovska, J.Y. Lin, Y.C. Chen, M.W. Chu, P.W. Chiu, Y.P. Chiu, L.Q. Chen, C.L. Wu, Y.H. Chu, Ferroelectric Control of the Conduction at the LaAlO3/SrTiO3 Heterointerface, Advanced Materials, 25 (2013) 3357-3364.

 

Prof. Chi-Huang Lin

 

[1] K.Y. Yu, C.R. Lee, C.H. Lin, C.T. Kuo, Controllable pretilt angle of liquid crystals with the formation of microgrooves, Journal of Physics D-Applied Physics, 46 (2013).

 

Prof. Chun-Yu Hsu

 

[1] C.Y. Hsu, Surface morphology and electrical transport of rapid thermal annealed chromium-doped indium zinc oxides: The influence of zinc interstitials and out-diffusion, Applied Physics Letters, 103 (2013).

 

Prof. Wei-Feng Tsai

 

[1] W.F. Tsai, C.Y. Huang, T.R. Chang, H. Lin, H.T. Jeng, A. Bansil, Gated silicene as a tunable source of nearly 100% spin-polarized electrons, Nature Communications, 4 (2013).

 

[2] Y.J. Wang, W.F. Tsai, H. Lin, S.Y. Xu, M. Neupane, M.Z. Hasan, A. Bansil, Nontrivial spin texture of the coaxial Dirac cones on the surface of topological crystalline insulator SnTe, Physical Review B, 87 (2013).

 

[3] Y.Y. Zhang, W.F. Tsai, K. Chang, X.T. An, G.P. Zhang, X.C. Xie, S.S. Li, Electron delocalization in gate-tunable gapless silicene, Physical Review B, 88 (2013).

 

Prof. Shiu-Ming Huang

 

[1] A.O. Badrutdinov, S.M. Huang, K. Ono, K. Kono, D.A. Tayurskii, Dynamic nuclear polarization with three electrons in a vertical double quantum dot, Physical Review B, 88 (2013).

 

[2] S.M. Huang, A.O. Badrutdinov, K. Kono, K. Ono, A possible solution for charge sensing in vertical double quantum dots, Journal of Physics-Condensed Matter, 25 (2013).

 

[3] S.M. Huang, A.O. Badrutdinov, K. Kono, K. Ono, Strong Rashba Spin-Orbit Interaction Intensity in Low-Potential-Barrier Quantum Dots, Japanese Journal of Applied Physics, 52 (2013).

 

Prof. Tsung-Wei Chen

 

[1] T.W. Chen, Maximum intrinsic spin-Hall conductivity in two-dimensional systems with k-linear spin-orbit interaction, Journal of Physics-Condensed Matter, 25 (2013).